Kinetics of charge carrier recombination in beta-Ga2O3 single crystals (Conference Presentation)

Cuong Ton-That; Tung Huynh; Laurent Lee Cheong Lem; Akito Kuramata; Matthew Phillips

doi:10.1117/12.2518229

8 March 2019 Kinetics of charge carrier recombination in beta-Ga₂O₃ single crystals (Conference Presentation)

Cuong Ton-That, Tung Huynh, Laurent Lee Cheong Lem, Akito Kuramata, Matthew Phillips

Proceedings Volume 10919, Oxide-based Materials and Devices X; 109190V (2019) https://doi.org/10.1117/12.2518229
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

We used temperature-resolved cathodoluminescence to determine the characteristics of luminescence bands and carrier dynamics in edge-defined film-fed grown (EFG) beta-Ga2O3 single crystals synthesized by Tamura Corporation. The crystal is nominally undoped and has a (-201) surface orientation. The main impurities are Si, Ir, Al and Fe, with [Fe] ~ 10^17 cm-3 verified by Inductively Coupled Plasma Mass Spectrometry (ICP-MS). The CL emission was found to be dominated by a broad UV emission peaked at 3.40 eV, which exhibits strong quenching with increasing temperature; however, its spectral shape and energy position remain virtually unchanged up to 500 K. Depth-resolved analysis reveals the luminescence spectrum is independent of sampling depth. We observed a super-linear increase of CL intensity with excitation density; this kinetics of carrier recombination can be explained in terms of carrier trapping and charge transfer at Fe3+/2+ centers. The temperature-dependent properties of this UV band were found to be consistent with weakly bound electrons in self-trapped excitons with an activation energy of 48 +/- 10 meV. In addition to the self-trapped exciton emission, a blue luminescence (BL) band is shown to be related to a donor-like defect, which increases significantly in concentration after remote hydrogen plasma treatment. The point defect responsible for the BL, likely an oxygen vacancy or a complex, is strongly coupled to the lattice with a Huang-Rhys factor S = 7.3.

Conference Presentation

Citation Download Citation

Cuong Ton-That, Tung Huynh, Laurent Lee Cheong Lem, Akito Kuramata, and Matthew Phillips "Kinetics of charge carrier recombination in beta-Ga₂O₃ single crystals (Conference Presentation)", Proc. SPIE 10919, Oxide-based Materials and Devices X, 109190V (8 March 2019); https://doi.org/10.1117/12.2518229

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
PRESENTATION

WATCH
PRESENTATION SAVE TO MY LIBRARY

GET CITATION

KEYWORDS

Crystals

Luminescence

Excitons

Iron

Ultraviolet radiation

Aluminum

Carrier dynamics

Show All Keywords

Keywords/Phrases

Search In:

Publication Years