Modeling of the submicron MOSFETs characteristics for UTSi technology

A. S. Adonin; K. O. Petrosyants; D. A. Popov

doi:10.1117/12.2522082

15 March 2019 Modeling of the submicron MOSFETs characteristics for UTSi technology

A. S. Adonin, K. O. Petrosyants, D. A. Popov

Proceedings Volume 11022, International Conference on Micro- and Nano-Electronics 2018; 110220G (2019) https://doi.org/10.1117/12.2522082
Event: The International Conference on Micro- and Nano-Electronics 2018, 2018, Zvenigorod, Russian Federation

Abstract

New SOS MOSFET design with the presence of high-resistance undoped silicon of intrinsic conductivity in the channel region near the source was proposed. 0.75 μm SOS MOSFET with the use of an "insertion" makes it possible to obtain the transistor with characteristics corresponding to a transistor with 0.5 μm topological channel length. This allows the factories to produce new competitive products without significant capital expenditures for the modernization of production capacities.

Citation Download Citation

A. S. Adonin, K. O. Petrosyants, and D. A. Popov "Modeling of the submicron MOSFETs characteristics for UTSi technology", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110220G (15 March 2019); https://doi.org/10.1117/12.2522082

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