Sidewall defects in deep cryogenic Si etching in SF6/O2 plasma: a numerical simulation

M. Rudenko; A. Miakonkikh; D. Kurbat; V. Lukichev

doi:10.1117/12.2522414

15 March 2019 Sidewall defects in deep cryogenic Si etching in SF₆/O₂ plasma: a numerical simulation

M. Rudenko, A. Miakonkikh, D. Kurbat, V. Lukichev

Proceedings Volume 11022, International Conference on Micro- and Nano-Electronics 2018; 110221Y (2019) https://doi.org/10.1117/12.2522414
Event: The International Conference on Micro- and Nano-Electronics 2018, 2018, Zvenigorod, Russian Federation

Abstract

A model for the simulation of two-dimensional profile evolution during cryogenic Si etching in SF₆/O₂ plasma is proposed and implemented. It employs Monte-Carlo method for particle fluxes computation and cell-based representation of the profile. The model is tuned specifically for studying various profile defects of stochastic nature. To this end the state of a model cell is represented as the combination of states of several subcells, stochastically chosen on each particle-surface interaction, thus allowing to represent profile phenomena with high- resolution without compromising simulation performance. The model is verified by matching the simulation results with experimental data; good qualitative agreement is observed. Then it is used to investigate surface defects specific to high aspect ratio cryogenic etching. Among them are depth-dependent wall roughness, cavern formation, trench splitting and black silicon formation.

Citation Download Citation

M. Rudenko, A. Miakonkikh, D. Kurbat, and V. Lukichev "Sidewall defects in deep cryogenic Si etching in SF₆/O₂ plasma: a numerical simulation", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110221Y (15 March 2019); https://doi.org/10.1117/12.2522414

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