Lensless metrology for semiconductor lithography at EUV

Iacopo Mochi; Dimitrios Kazazis; Li-Ting Tseng; Sara Fernandez; Rajendran Rajeev; Uldis Locans; Atoosa Dejkameh; Ricarda Nebling; Ekinci Yasin

doi:10.1117/12.2534350

21 June 2019 Lensless metrology for semiconductor lithography at EUV

Iacopo Mochi, Dimitrios Kazazis, Li-Ting Tseng, Sara Fernandez, Rajendran Rajeev, Uldis Locans, Atoosa Dejkameh, Ricarda Nebling, Ekinci Yasin

Author Affiliations +

Proceedings Volume 11057, Modeling Aspects in Optical Metrology VII; 1105703 (2019) https://doi.org/10.1117/12.2534350
Event: SPIE Optical Metrology, 2019, Munich, Germany

Abstract

The production of modern semiconductor devices is based on photolithography, a process through which a pattern engraved on a mask is projected on a silicon wafer coated with a photosensitive material. In the past few decades, continuous technological progress in this field allowed the industry to follow Moore’s law by reducing the size of the printed features. This was achieved by progressively increasing the numerical aperture of the projection system and reducing the wavelength. The latest lithography platforms for semiconductor manufacturing employ Extreme Ultra Violet (EUV) light at a wavelength of 13.5 nm. The metrology for the optics and the components of such platforms is not fully mature yet. Specifically, the inspection of the EUV photomask is still an open issue as no commercial solutions are currently available. Here we describe a lensless approach to this problem, based on coherent diffraction imaging at EUV that overcomes the main technological issues linked to the conventional mask inspection approach.

Citation Download Citation

Iacopo Mochi, Dimitrios Kazazis, Li-Ting Tseng, Sara Fernandez, Rajendran Rajeev, Uldis Locans, Atoosa Dejkameh, Ricarda Nebling, and Ekinci Yasin "Lensless metrology for semiconductor lithography at EUV", Proc. SPIE 11057, Modeling Aspects in Optical Metrology VII, 1105703 (21 June 2019); https://doi.org/10.1117/12.2534350

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