Organometallic Vapor Phase Epitaxial Growth Of HgTe And HgCdTe Using Methylallyltelluride

Ishwara B. Bhat; Hassan Ehsani; Sorab K. Ghandhi

doi:10.1117/12.960626

12 September 1989 Organometallic Vapor Phase Epitaxial Growth Of HgTe And HgCdTe Using Methylallyltelluride

Ishwara B. Bhat, Hassan Ehsani, Sorab K. Ghandhi

Proceedings Volume 1106, Future Infrared Detector Materials; (1989) https://doi.org/10.1117/12.960626
Event: SPIE 1989 Technical Symposium on Aerospace Sensing, 1989, Orlando, FL, United States

Abstract

HgTe and HgCdTe layers have been grown by organometallic vapor phase epitaxy at low temperature by using methylallyltelluride (MATe), dimethylcadmium (DMCd) and elemental mercury. Use of MATe enabled us to grow layers in the 250-320°C range, which is 50°C lower than the growth temperature when diisopropyltelluride (DIPTe) is used. The layers were characterized by double crystal x-ray diffraction, low temperature Hall measurements and Fourier transform infrared spectroscopy (FTIR). Growth below 340°C resulted in featureless HgTe layers. Layers grown on CdTe are misoriented with respect to the substrate by about 60 to 150 arc-seconds whereas such tilting was not observed when lattice matched CdZnTe substrates were used. The high quality of HgTe grown at low temperature is demonstrated by the very narrow (29 arc seconds) full width at half maximum of the x-ray diffraction curve. HgCdTe layers grown at 320°C showed sharp interference fringes even for thin layers, indicating the presence of a sharp interface.

Citation Download Citation

Ishwara B. Bhat, Hassan Ehsani, and Sorab K. Ghandhi "Organometallic Vapor Phase Epitaxial Growth Of HgTe And HgCdTe Using Methylallyltelluride", Proc. SPIE 1106, Future Infrared Detector Materials, (12 September 1989); https://doi.org/10.1117/12.960626

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