Strong crystal field splitting and polarization dependence observed in the emission from Eu3+ ions doped into GaN

S. Copelman; H. Austin; D. Timmerman; J. D. Poplawsky; M. Waite; J. Tatebayashi; S. Ichikawa; Y. Fujiwara; V. Dierolf; B. Mitchell

doi:10.1117/12.2544005

25 February 2020 Strong crystal field splitting and polarization dependence observed in the emission from Eu³⁺ ions doped into GaN

S. Copelman, H. Austin, D. Timmerman, J. D. Poplawsky, M. Waite, J. Tatebayashi, S. Ichikawa, Y. Fujiwara, V. Dierolf, B. Mitchell

Author Affiliations +

Proceedings Volume 11302, Light-Emitting Devices, Materials, and Applications XXIV; 113021Z (2020) https://doi.org/10.1117/12.2544005
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

Eu-doped GaN is a promising material with a wide array of potential applications in optoelectronics, optogenetics, micro displays and quantum computing. While this system has been the subject of intense investigation for the last two decades, several questions still remain about certain aspects of its optical properties, such as the polarization dependence of the optical transitions, and the coupling between the 4f-electron configuration and bulk phonons, as well and the appearance of local phonon modes. Moreover, the origin of certain emission peaks remains under debate in the literature. In this proceeding, the results of a systematic series of “site-selective” photoluminescence measurements are presented, where the properties of pulsed and continuous-wave laser excitation, such as polarization and intensity, were controlled.

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S. Copelman, H. Austin, D. Timmerman, J. D. Poplawsky, M. Waite, J. Tatebayashi, S. Ichikawa, Y. Fujiwara, V. Dierolf, and B. Mitchell "Strong crystal field splitting and polarization dependence observed in the emission from Eu³⁺ ions doped into GaN", Proc. SPIE 11302, Light-Emitting Devices, Materials, and Applications XXIV, 113021Z (25 February 2020); https://doi.org/10.1117/12.2544005

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