A novel accurate and robust technique in after-etch overlay metrology of 3D-NAND’s memory holes

Yaobin Feng; Dean Wu; Pandeng Xuan; Pavel Izikson; Payne Qi; Huanian You; Yvon Chai; Jan Jitse Venselaar; Giulio Bottegal; Gonzalo Sanguinetti; Bert Verstraeten; Tjitte Nooitgedagt; Babak Mozooni

doi:10.1117/12.2553054

20 March 2020 A novel accurate and robust technique in after-etch overlay metrology of 3D-NAND’s memory holes

Yaobin Feng, Dean Wu, Pandeng Xuan, Pavel Izikson, Payne Qi, Huanian You, Yvon Chai, Jan Jitse Venselaar, Giulio Bottegal, Gonzalo Sanguinetti, Bert Verstraeten, Tjitte Nooitgedagt, Babak Mozooni

Author Affiliations +

Proceedings Volume 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV; 1132522 (2020) https://doi.org/10.1117/12.2553054
Event: SPIE Advanced Lithography, 2020, San Jose, California, United States

Abstract

In this work a novel machine learning algorithm is used to calculate the after etch overlay of the memory holes in a 3DNAND device based on OCD metrology by YieldStar S1375. It is shown that the method can distinguish the overlay signals from the process induced signals in the acquired pupil image and therefore, enables for an overlay metrology approach which is highly robust to process variations. This metrology data is used to characterize and correct the process induced intra-die stress and the DUV scanner application fingerprint.

Citation Download Citation

Yaobin Feng, Dean Wu, Pandeng Xuan, Pavel Izikson, Payne Qi, Huanian You, Yvon Chai, Jan Jitse Venselaar, Giulio Bottegal, Gonzalo Sanguinetti, Bert Verstraeten, Tjitte Nooitgedagt, and Babak Mozooni "A novel accurate and robust technique in after-etch overlay metrology of 3D-NAND’s memory holes", Proc. SPIE 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV, 1132522 (20 March 2020); https://doi.org/10.1117/12.2553054

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