Low damage etching by Inductively Coupled Plasma Reactive Ion Etch (ICP-RIE) and Atomic Layer Etching (ALE) of III-V materials to enable next generation device performance

Mark Dineen; Matthew Loveday; Andy Goodyear; Mike Cooke; Andrew Newton; Stephanie Baclet; Craig Ward; Tania Hemakumara

doi:10.1117/12.2558732

23 March 2020 Low damage etching by Inductively Coupled Plasma Reactive Ion Etch (ICP-RIE) and Atomic Layer Etching (ALE) of III-V materials to enable next generation device performance

Mark Dineen, Matthew Loveday, Andy Goodyear, Mike Cooke, Andrew Newton, Stephanie Baclet, Craig Ward, Tania Hemakumara

Author Affiliations +

Proceedings Volume 11329, Advanced Etch Technology for Nanopatterning IX; 113290I (2020) https://doi.org/10.1117/12.2558732
Event: SPIE Advanced Lithography, 2020, San Jose, California, United States

Abstract

Performance demands for many devices has driven feature dimensions to reduce to sub nm scale. Whilst new, and complex combinations of materials have increased the importance of interface effects at the atomic scale. Many of the macro-market dynamics such as Internet of Everything, increased volume in data traffic and energy efficiency require III-V based devices eg GaN, SiC. The combination of new materials and dimensions means that new etch solutions are required to achieve the accuracy and low damage needed for optimized device results. Low damage etching of AlGaN, GaN and SiN layers were studied using the PlasmaPro100 Cobra300 system from Oxford Instruments Plasma Technology, configured with ICP-RIE, RIE and ALE plasma etching modes. These techniques were used to etch shallow depths of between 5 and 100 nm in both SiN, AlGaN and GaN substrates and the resultant etched surface layer quality was measured using Atomic Force Microscopsy (AFM). ALE of SiN and GaN showed etch rates of 2.5 nm/min and 2 nm/min respectively. Using a conventional ICP-RIE process a GaN etch rate of 50 nm/min with a selectivity to AlGaN of 25:1 was achieved.

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Mark Dineen, Matthew Loveday, Andy Goodyear, Mike Cooke, Andrew Newton, Stephanie Baclet, Craig Ward, and Tania Hemakumara "Low damage etching by Inductively Coupled Plasma Reactive Ion Etch (ICP-RIE) and Atomic Layer Etching (ALE) of III-V materials to enable next generation device performance", Proc. SPIE 11329, Advanced Etch Technology for Nanopatterning IX, 113290I (23 March 2020); https://doi.org/10.1117/12.2558732

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KEYWORDS

Etching

Gallium nitride

Plasma

Argon

Semiconducting wafers

Chlorine

Field effect transistors

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