Theoretical Aspects Of Semiconductor Imaging

P. D. Pester; T. Wilson

doi:10.1117/12.961771

28 September 1989 Theoretical Aspects Of Semiconductor Imaging

P. D. Pester, T. Wilson

Proceedings Volume 1139, Optical Storage and Scanning Technology; (1989) https://doi.org/10.1117/12.961771
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France

Abstract

A discussion is given of the various factors effecting the minority carrier distribution excited in a semiconducting sample by a focused light beam. Parameters considered include the objective lens numerical aperture, the surface recombination velocity and the exciting beam scan speed. The discussion is aimed at producing a theoretical understanding of the optical beam induced current (OBIC) and photoluminescence (PL) semiconductor imaging techniques.

Citation Download Citation

P. D. Pester and T. Wilson "Theoretical Aspects Of Semiconductor Imaging", Proc. SPIE 1139, Optical Storage and Scanning Technology, (28 September 1989); https://doi.org/10.1117/12.961771

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