Presentation
26 February 2021 Today’s scorecard for tomorrow’s photoresist: progress and outlook towards High-NA EUV lithography
Jara Garcia Santaclara, Gijsbert Rispens, Joost Bekaert, Arame Thiam, Mark Maslow, Rik Hoefnagels, Nadia Zuurbier, Lidia van Lent-Protasova, Fong Choi Yin
Author Affiliations +
Abstract
As feature sizes continue to shrink, low k1 lithographic processes are required to advance chip technologies. To achieve actual gains in resolution, both the advances in optical systems and imaging capabilities, as well as the improvements in EUV materials and photoresists are key. Researchers today are evaluating the readiness of State-of-the-art materials and processing needed for future applications with 0.33NA exposures at the ASML-imec Advanced Patterning Center, together with studies involving High-NA exposure tools at Lawrence Berkeley National Laboratories and the Paul Scherrer Institute. This talk will give a broad overview of the progress and innovations on high resolution photoresists and patterning processes, and will highlight the key areas of development needed towards high-NA EUV lithography.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jara Garcia Santaclara, Gijsbert Rispens, Joost Bekaert, Arame Thiam, Mark Maslow, Rik Hoefnagels, Nadia Zuurbier, Lidia van Lent-Protasova, and Fong Choi Yin "Today’s scorecard for tomorrow’s photoresist: progress and outlook towards High-NA EUV lithography", Proc. SPIE 11612, Advances in Patterning Materials and Processes XXXVIII, 1161204 (26 February 2021); https://doi.org/10.1117/12.2586645
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Cited by 1 scholarly publication.
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KEYWORDS
Extreme ultraviolet lithography

Photoresist materials

Optical lithography

Image resolution

Imaging systems

Lithography

Optical imaging

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