Improving the detectivity of MoS2 photodetector based on metal-semiconductor interface modification

Xiaotian Zhu; Fengyuan Lin; Zhihong Zhang; Xue Chen; Hao Huang; Zhipeng Wei

doi:10.1117/12.2587424

12 March 2021 Improving the detectivity of MoS₂ photodetector based on metal-semiconductor interface modification

Xiaotian Zhu, Fengyuan Lin, Zhihong Zhang, Xue Chen, Hao Huang, Zhipeng Wei

Author Affiliations +

Proceedings Volume 11763, Seventh Symposium on Novel Photoelectronic Detection Technology and Applications; 1176377 (2021) https://doi.org/10.1117/12.2587424
Event: Seventh Symposium on Novel Photoelectronic Detection Technology and Application 2020, 2020, Kunming, China

Abstract

Mechanical transfer electrode can effectively reduce the contact surface between the electrode and semiconductor material, however this method has not been applied to improve the performance of photoelectric devices. In this paper, MoS₂ thin film photodetectors are fabricated by this novel method. Compared with the MoS₂ thin film photodetectors prepared by the traditional hot evaporation method, the dark current of the transfer device decreased by nearly one order of magnitude, reaching 4.6 × 10^-7 A, and the detectivity also increased significantly to 2.1 × 10¹⁰ Jones. All these results show that the mechanical transfer electrode can optimize the contact interface between the electrode and semiconductor material to achieve a higher performance photodetector.

Citation Download Citation

Xiaotian Zhu, Fengyuan Lin, Zhihong Zhang, Xue Chen, Hao Huang, and Zhipeng Wei "Improving the detectivity of MoS₂ photodetector based on metal-semiconductor interface modification", Proc. SPIE 11763, Seventh Symposium on Novel Photoelectronic Detection Technology and Applications, 1176377 (12 March 2021); https://doi.org/10.1117/12.2587424

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