Magneto-Transport Characterization Of E-Beam-Induced Damage In GaAs-AlGaAs Heterostructures

Tobin Fink; Doran D. Smith; W. D. Braddock

doi:10.1117/12.978066

30 January 1990 Magneto-Transport Characterization Of E-Beam-Induced Damage In GaAs-AlGaAs Heterostructures

Tobin Fink, Doran D. Smith, W. D. Braddock

Proceedings Volume 1185, Dry Processing for Submicrometer Lithography; (1990) https://doi.org/10.1117/12.978066
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

The effect of electron irradiation as a function of energy on the 2D EG transport properties of high electron mobility transistor (HEMT) structures at liquid helium temperature was measured. High mobility HEMT structures were molecular beam epitaxy (MBE) grown with a 2D EG channel approximately 850 A below the surface. A Cambridge EBMF 10.5 was used for electron irradiation with electron energies between 2.5 and 20 keV. The HEMT structures were fabricated into Hall bar geometry. Damage is assessed by changes in the 2D EG concentrations, as determined from Shubnikov-de Haas (SdH) oscillations in a magnetic field from 0 to 8.5 Telsa, and changes in the zero field Hall mobilities. For electron energies from 5.0 to 12.5 keV, the electron dose produced a degradation of the Hall mobility. No -damage effect was observed for electron energies at 2.5 keV and 15 keV and above. This result could be attributed to the penetration depth and damage distribution. Electron damage introduced parallel conduction which was exhibited in the magnetoresistance curves. The results of this work will be useful in reducing damage from electron beam proCessing of submicron devices.

Citation Download Citation

Tobin Fink, Doran D. Smith, and W. D. Braddock "Magneto-Transport Characterization Of E-Beam-Induced Damage In GaAs-AlGaAs Heterostructures", Proc. SPIE 1185, Dry Processing for Submicrometer Lithography, (30 January 1990); https://doi.org/10.1117/12.978066

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