Wafer-scale integration of layered 2D materials by adhesive wafer bonding

Arne Quellmalz; Simon Sawallich; Maximilian Prechtl; Oliver Hartwig; Georg S. Duesberg; Max C. Lemme; Frank Niklaus; Kristinn B. Gylfason

doi:10.1117/12.2605116

5 March 2022 Wafer-scale integration of layered 2D materials by adhesive wafer bonding

Arne Quellmalz, Simon Sawallich, Maximilian Prechtl, Oliver Hartwig, Georg S. Duesberg, Max C. Lemme, Frank Niklaus, Kristinn B. Gylfason

Author Affiliations +

Proceedings Volume 12003, 2D Photonic Materials and Devices V; 1200304 (2022) https://doi.org/10.1117/12.2605116
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

The integration of atomically thin materials into semiconductor and photonic foundries is crucial for their use in commercial devices. However, current integration approaches are not compatible with industrial processing on wafer level, which is one of the bottlenecks hindering the breakthrough of 2D materials. Here, we present a generic methodology for the large-area transfer of 2D materials and their heterostructures by adhesive wafer bonding for use at the back end of the line (BEOL). Our approach exclusively uses processes and materials readily available in most largescale semiconductor manufacturing lines. Experimentally, we demonstrated the transfer of CVD graphene from Cu foils to 100-mm-diameter silicon wafers, the stacking of two monolayers of graphene to 2-layer graphene, and the formation of MoS₂/graphene heterostructures by two consecutive transfers. We expect that our methodology is an important step towards the commercial use of 2D materials for a wide range of applications in optics and photonics.

Conference Presentation

Citation Download Citation

Arne Quellmalz, Simon Sawallich, Maximilian Prechtl, Oliver Hartwig, Georg S. Duesberg, Max C. Lemme, Frank Niklaus, and Kristinn B. Gylfason "Wafer-scale integration of layered 2D materials by adhesive wafer bonding", Proc. SPIE 12003, 2D Photonic Materials and Devices V, 1200304 (5 March 2022); https://doi.org/10.1117/12.2605116

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