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7 March 2022 High-power UVC LED on flat and nanopatterned sapphire substrates
Wen-Hsuan Hsieh
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Proceedings Volume 12022, Light-Emitting Devices, Materials, and Applications XXVI; 1202205 (2022) https://doi.org/10.1117/12.2608727
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
We demonstrated a high power UVC LED using a novel high-quality AlN template. The superior electrical performance is attributed to the decent quality-strain engineering with AlN/AlGaN epitaxy. Using p-type AlGaN SL instead of p-GaN as the contact layer, might reduce the UVC light absorption coefficient up to 90%, and improve the output power of the device up to 45%. The utilization of p-AlGaN layer and nPSS improved the light extraction efficiency via different mechanisms.
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Wen-Hsuan Hsieh "High-power UVC LED on flat and nanopatterned sapphire substrates", Proc. SPIE 12022, Light-Emitting Devices, Materials, and Applications XXVI, 1202205 (7 March 2022); https://doi.org/10.1117/12.2608727
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KEYWORDS
Sapphire
Light emitting diodes
External quantum efficiency
Nanostructures
Superlattices
Aluminum nitride
Annealing
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