High-speed processing of silicon carbide ceramic by high repetition frequency femtosecond laser

Jian Zhang; Feng Geng; Zhichao Liu; Qinghua Zhang; Qiao Xu; Yaguo Li

doi:10.1117/12.2606330

1 November 2021 High-speed processing of silicon carbide ceramic by high repetition frequency femtosecond laser

Jian Zhang, Feng Geng, Zhichao Liu, Qinghua Zhang, Qiao Xu, Yaguo Li

Proceedings Volume 12057, Twelfth International Conference on Information Optics and Photonics; 1205737 (2021) https://doi.org/10.1117/12.2606330
Event: Twelfth International Conference on Information Optics and Photonics, 2021, Xi'an, China

Abstract

In this study, silicon carbide ceramic (SiC) was processed by a high repetition frequency femtosecond laser with a wavelength of 1030 nm. We have analyzed the affection of different parameters to the material removal rate and researched surface oxidation phenomenon during laser scanning. The surface oxidation phenomenon is a major factor that affects the material removal rate of SiC ceramic and may even lead to failure of material removal. The oxidation phenomenon of the processing area is directly related to the laser induced temperature rise. Increasing laser scanning speed and increasing laser scanning interval are effective methods to reduce the oxidation phenomenon. The experiments have demonstrated that high-speed processing of SiC ceramic by high repetition frequency femtosecond laser is available under certain parameters.

Citation Download Citation

Jian Zhang, Feng Geng, Zhichao Liu, Qinghua Zhang, Qiao Xu, and Yaguo Li "High-speed processing of silicon carbide ceramic by high repetition frequency femtosecond laser", Proc. SPIE 12057, Twelfth International Conference on Information Optics and Photonics, 1205737 (1 November 2021); https://doi.org/10.1117/12.2606330

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