Paper
1 July 1990 Numerical simulations of all-optical switching using nonlinear semiconductor etalons
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Proceedings Volume 1215, Digital Optical Computing II; (1990) https://doi.org/10.1117/12.18075
Event: OE/LASE '90, 1990, Los Angeles, CA, United States
Abstract
Recent results in the modeling and optimization of semiconductor etalon-based devices for optical switching and signal-processing applications are reviewed. Critical device performance criteria including contrast, cascadability, switching speed and energy are evaluated for both one- and two-wavelength device concepts.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dean Richardson, Hyatt M. Gibbs, and Stephan W. Koch "Numerical simulations of all-optical switching using nonlinear semiconductor etalons", Proc. SPIE 1215, Digital Optical Computing II, (1 July 1990); https://doi.org/10.1117/12.18075
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KEYWORDS
Fabry–Perot interferometers

Switching

Semiconductors

Absorption

Picosecond phenomena

Gallium arsenide

Optical computing

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