Design and simulation of high speed AlInP/AlGaInP/AlInP double heterostructure visible photodetector

Donghao Deng; Xiaoxue Bai; Shuqing Yang; LiLi Jiang; Juan Su; Chi Wu

doi:10.1117/12.2625947

27 March 2022 Design and simulation of high speed AlInP/AlGaInP/AlInP double heterostructure visible photodetector

Donghao Deng, Xiaoxue Bai, Shuqing Yang, LiLi Jiang, Juan Su, Chi Wu

Proceedings Volume 12169, Eighth Symposium on Novel Photoelectronic Detection Technology and Applications; 12169AJ (2022) https://doi.org/10.1117/12.2625947
Event: Eighth Symposium on Novel Photoelectronic Detection Technology and Applications, 2021, Kunming, China

Abstract

The quaternary alloy (Al_xGa_1-x) _y In_1-yP is an attractive material due to its bandgap tunability while being lattice-matched to GaAs. Although this direct gap quaternary material is being extensively used for the visible lasers and LEDs due to its unique light absorption/emission properties, the applications in visible photodetectors remain unexplored. In this paper, A symmetric mesa AlInP/AlGaInP/AlInP double-heterostructure has been successfully designed based on the quaternary alloy for visible photodetection. The composition of (Al_xGa_1-x)_y In_1-yP was investigated with the help of MATLAB simulation and energy band discontinuity theory giving the values of y=0.48 and x=0.46. By using the first-order approximate data processing method and analogy with other III-V main group quaternary alloy compounds, the simulated values of bandwidth and responsivity are obtained to be 10 GHz and 0.85 A/W respectively at wavelength 560 nm. Meanwhile, by analyzing the influence of doping concentration and thickness of each layer on bandwidth and responsivity, the optimal doping concentration and thickness are obtained to be 2×10¹⁸cm^-3 and 0.5μm of P layer, 5×10¹⁵cm^-3 and 1μm of absorption layer, 5×10¹⁷cm^-3 and 0.5μm of N layer respectively. By selecting optimized parameters, the device exhibits a detectivity of 10⁸ cm√HzW^-1 and a noise equivalent power of 10^-11W. With high responsivity, high speed, and large bandwidth, the designed photodetector has a good application prospect.

Citation Download Citation

Donghao Deng, Xiaoxue Bai, Shuqing Yang, LiLi Jiang, Juan Su, and Chi Wu "Design and simulation of high speed AlInP/AlGaInP/AlInP double heterostructure visible photodetector", Proc. SPIE 12169, Eighth Symposium on Novel Photoelectronic Detection Technology and Applications, 12169AJ (27 March 2022); https://doi.org/10.1117/12.2625947

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KEYWORDS

Photodetectors

Aluminum

Absorption

Doping

Gallium

Optical instrument design

Heterojunctions

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