1 December 2022The trade-off between local critical dimension uniformity and sensitivity for contact hole high-NA printing in chemically amplified resists
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The trade-off between resist sensitivity and local critical dimension uniformity (LCDU) of contact hole (C/H) patterning is one of the most challenging issues facing cost effective high-numerical aperture (NA) high volume manufacturing. The focus margin at 0.55 NA is only 36% of that at 0.33 NA, which raises significant concerns about defocus-induced LCDU degradation. A chemically amplified resist (CAR_B) which resolved 24 nm pitch showed zero useful depth of focus (DOF) when considering LCDU specification for 32-nm pitch contact holes. If we relax the LCDU target to 18% of half pitch (or 2.88 nm), a useful DOF of 30 nm was obtained with CAR_B at 32 nm pitch contact hole. If we relax the LCDU target to 20% of half pitch (or 2.8 nm), a useful DOF of less than 10 nm was achieved with CAR_A for 28-nm pitch contact hole. Non-CAR positive-tone resist (PTR) was worse than CAR PTR in terms of LCDU at 32-nm pitch and 28-nm pitch dense contact holes. Non-CAR negativetone resist (NTR) has a demerit of ~8% lower NILS caused by usage of clear-tone mask. For sub 30-nm pitch dense contact hole patterning, it is highly recommended to develop positive-tone non-CAR material and to develop new additional processes that improve LCDU for high-NA implementation.
Chawon Koh,Jinkyu Han,Jinmo Kim,Cheolhong Park,Eunju Kim,Tsunehiro Nishi,Chris Anderson, andPatrick Naulleau
"The trade-off between local critical dimension uniformity and sensitivity for contact hole high-NA printing in chemically amplified resists", Proc. SPIE 12292, International Conference on Extreme Ultraviolet Lithography 2022, 1229203 (1 December 2022); https://doi.org/10.1117/12.2641648
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Chawon Koh, Jinkyu Han, Jinmo Kim, Cheolhong Park, Eunju Kim, Tsunehiro Nishi, Chris Anderson, Patrick Naulleau, "The trade-off between local critical dimension uniformity and sensitivity for contact hole high-NA printing in chemically amplified resists," Proc. SPIE 12292, International Conference on Extreme Ultraviolet Lithography 2022, 1229203 (1 December 2022); https://doi.org/10.1117/12.2641648