Mask and illumination optimization for low-k1 EUV lithography

Dong-Seok Nam; Jung-Hoon Ser; Nakgeuon Seong; Xiaoyang Li; Stephen Hsu; Anthony Yen

doi:10.1117/12.2651194

15 September 2022 Mask and illumination optimization for low-k₁ EUV lithography

Dong-Seok Nam, Jung-Hoon Ser, Nakgeuon Seong, Xiaoyang Li, Stephen Hsu, Anthony Yen

Proceedings Volume 12325, Photomask Japan 2022: XXVIII Symposium on Photomask and Next-Generation Lithography Mask Technology; 1232502 (2022) https://doi.org/10.1117/12.2651194
Event: Photomask Japan 2022, 2022, Online Only

Abstract

Source-mask optimization and EUV mask structure optimization are studied to maximize DOF and NILS for honeycomb hole arrays at 0.55NA. Optimization flow on mask structure conditions for good and stable NILS performance, such as peak-NILS, NILS-DOF, and NILS-MEEF, is proposed to minimize the local CD variation as a result of EUV mask properties. Using NILS metrics, the absorber thickness and the mask CD with optimized illumination conditions are determined for the maximum performance, together with the tolerance of absorber thickness and mask CD. EUV binary absorbers using high-n/mid-k and low-n/high-k materials, and EUV PSM absorbers using low-n/low-k and highreflectance materials, are compared for 28-, 26-, and 24-nm honeycomb hole arrays.

Citation Download Citation

Dong-Seok Nam, Jung-Hoon Ser, Nakgeuon Seong, Xiaoyang Li, Stephen Hsu, and Anthony Yen "Mask and illumination optimization for low-k₁ EUV lithography", Proc. SPIE 12325, Photomask Japan 2022: XXVIII Symposium on Photomask and Next-Generation Lithography Mask Technology, 1232502 (15 September 2022); https://doi.org/10.1117/12.2651194

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KEYWORDS

Photomasks

Critical dimension metrology

Extreme ultraviolet

Tolerancing

Extreme ultraviolet lithography

Source mask optimization

Stochastic processes

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