Comparison of dual-wavelength Y-branch DBR single chip diode lasers and diode laser arrays at 785 nm

Lara Sophie Theurer; Martin Maiwald; André Müller; Jörg Fricke; Andrea Knigge; Bernd Sumpf; Günther Tränkle

doi:10.1117/12.2648221

15 March 2023 Comparison of dual-wavelength Y-branch DBR single chip diode lasers and diode laser arrays at 785 nm

Lara Sophie Theurer, Martin Maiwald, André Müller, Jörg Fricke, Andrea Knigge, Bernd Sumpf, Günther Tränkle

Proceedings Volume 12440, Novel In-Plane Semiconductor Lasers XXII; 1244005 (2023) https://doi.org/10.1117/12.2648221
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

Shifted Excitation Raman Difference Spectroscopy (SERDS) is a powerful technique to separate disturbing background signals such as fluorescence and ambient light from Raman signals. Depending on the sample under investigation the requirements for SERDS excitation light sources can vary. In addition to narrow spectral dual-wavelength emission, the nature of the target might demand large inspection areas and herewith high output powers. Dual-wavelength Y-branch distributed Bragg reflector (DBR) diode lasers with output powers exceeding 100 mW have been proven to be suitable light sources for SERDS. Spectral stabilization is provided by deeply etched 10^th order DBR gratings, manufactured using e-beam lithography. One way to increase the inspection area is a dual-wavelength Y-branch DBR diode laser array for the excitation of multiple spots and herewith gaining more information about the sample under study. Here, we present a 5 mm wide, ten emitter dual-wavelength Y-branch DBR diode laser array. Electro-optical and spectral characteristics will be discussed with respect to the application SERDS. The individual emitters have a spectral emission width of less than 20 pm. At 1 W optical output power the spectral emission from the ten emitters has a full width at half maximum of 60 pm or less at both wavelengths. The narrow emission proves homogeneously manufactured DBR gratings, which are designed to provide dual-wavelength emission at 784.0 nm and 784.6 nm at 1 W optical output power. Lifetime of 5,000 h was exemplarily demonstrated. The influence of the emitters of the array on each other will be investigated and compared to the single chip Y-branch diode laser properties.

Conference Presentation

Citation Download Citation

Lara Sophie Theurer, Martin Maiwald, André Müller, Jörg Fricke, Andrea Knigge, Bernd Sumpf, and Günther Tränkle "Comparison of dual-wavelength Y-branch DBR single chip diode lasers and diode laser arrays at 785 nm", Proc. SPIE 12440, Novel In-Plane Semiconductor Lasers XXII, 1244005 (15 March 2023); https://doi.org/10.1117/12.2648221

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