Paper
31 January 2023 Study on GaAs photocathode band structure and inbuilt electric field under exponential doping
Author Affiliations +
Proceedings Volume 12477, International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors 2022; 1247706 (2023) https://doi.org/10.1117/12.2646842
Event: International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors, 2022, Boston, Massachusetts, United States
Abstract
By changing the doping type, the size of the in-built electric field and the band bending of GaAs photocathode material under different varying doping concentration are simulated to discuss the influence of varying doping concentration on the quantum efficiency of cathode.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xing Lv, Rongguo Fu, JianPo Gao, Xin Guo, Yingjie Wang, Huanan Zhang, Lingyun Ma, Mingzhu Huang, and Xiang Yu "Study on GaAs photocathode band structure and inbuilt electric field under exponential doping", Proc. SPIE 12477, International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors 2022, 1247706 (31 January 2023); https://doi.org/10.1117/12.2646842
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KEYWORDS
Doping

Gallium arsenide

Quantum efficiency

Diffusion

Interfaces

Semiconductor materials

Electron transport

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