Nonlocal effects and transfer fields for electronic noise in small devices

Luca Varani; Jean Claude Vaissiere; Pavel Shiktorov; Evjeni Starikov; Viktor Gruzhinskis; Tomas Gonzalez; Javier Mateos; Daniel Pardo; Lino Reggiani

doi:10.1117/12.545597

25 May 2004 Nonlocal effects and transfer fields for electronic noise in small devices

Luca Varani, Jean Claude Vaissiere, Pavel Shiktorov, Evjeni Starikov, Viktor Gruzhinskis, Tomas Gonzalez, Javier Mateos, Daniel Pardo, Lino Reggiani

Author Affiliations +

Proceedings Volume 5470, Noise in Devices and Circuits II; (2004) https://doi.org/10.1117/12.545597
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain

Abstract

This paper overviews and implements the transfer-field method applied to the calculation of electronic noise in small semiconductor structures. Two basic schemes are used and developed in detail. The former considers velocity fluctuations and the latter acceleration fluctuations as microcopic noise sources. We show that the latter scheme has several advantages with respect to the former one. Indeed, starting from Markovian noise sources, the latter scheme separates the time and spatial evolution of the local noise sources. In this way, the dual representation of the noise spectral density in terms of impedance and admittance fields is recovered. A remarkable achievement is that from the knowledge of the bulk Langevin sources at a hydrodynamic level it is possible to calculate the noise spectra of non-homogeneous structures even for nanometric devices. The method is validated by comparing the results of the present scheme with those obtained from self-consistent Monte Carlo approaches for different structures of interest.

Citation Download Citation

Luca Varani, Jean Claude Vaissiere, Pavel Shiktorov, Evjeni Starikov, Viktor Gruzhinskis, Tomas Gonzalez, Javier Mateos, Daniel Pardo, and Lino Reggiani "Nonlocal effects and transfer fields for electronic noise in small devices", Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); https://doi.org/10.1117/12.545597

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