Characterization of TSV etch from a sustainability standpoint

Osakpolo Isowamwen; Nathan Marchack; Devi Koty; Qingyun Yang; Hien Nguyen; Steve Molis; Scott Lefevre; Marco Hopstaken; Andy Metz; Jeff Shearer; Robert L. Bruce

doi:10.1117/12.2658564

1 May 2023 Characterization of TSV etch from a sustainability standpoint

Osakpolo Isowamwen, Nathan Marchack, Devi Koty, Qingyun Yang, Hien Nguyen, Steve Molis, Scott Lefevre, Marco Hopstaken, Andy Metz, Jeff Shearer, Robert L. Bruce

Author Affiliations +

Proceedings Volume 12499, Advanced Etch Technology and Process Integration for Nanopatterning XII; 124990H (2023) https://doi.org/10.1117/12.2658564
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States

Abstract

The recent passing of the CHIPS act has highlighted the semiconductor industry as a driver of innovation. Simultaneously, environmental legislation regarding per- and polyfluoroalkylated substances (PFAS) usage has become a major focus in both the US and EU, which has potential implications for many hydro- and perfluorocarbon (HFC/PFC) gases currently used in semiconductor manufacturing. High-aspect ratio (HAR) etch processes are a critical component of two high-growth manufacturing areas (packaging and solid-state memory), however, they are significant consumers of HFC/PFC chemistries due to the vertical scale of the features involved. This paper analyzes reduced gas flow effects in a HAR through-silicon via (TSV) etch process, with the aim of improving the sustainability of future processes through an improved mechanistic understanding. We demonstrate a cyclic C4F8 /SF6 TSV process with ~90% ER and comparable sidewall roughness using 50% of the SF6 flow rate and 60% of the passivation time. We also show through TOF-SIMS analysis a depth dependence of the sulfur and fluorocarbon concentrations on the TSV sidewall which varies with gas flow rate, providing further insight into the mechanisms associated with HAR etching.

Conference Presentation

Citation Download Citation

Osakpolo Isowamwen, Nathan Marchack, Devi Koty, Qingyun Yang, Hien Nguyen, Steve Molis, Scott Lefevre, Marco Hopstaken, Andy Metz, Jeff Shearer, and Robert L. Bruce "Characterization of TSV etch from a sustainability standpoint", Proc. SPIE 12499, Advanced Etch Technology and Process Integration for Nanopatterning XII, 124990H (1 May 2023); https://doi.org/10.1117/12.2658564

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