Paper
1 June 1990 Chemically amplified resists for I-line and G-line applications
Amanda K. Berry, Wayne E. Feely, Stephen D. Thompson, Gary S. Calabrese, Roger F. Sinta, Angelo A. Lamola, James W. Thackeray, George W. Orsula
Author Affiliations +
Abstract
This paper describes the evaluation of several phenothiazine and benzophenothiazine derivatives which are useful as i-line and g-line photosensitizers for a class of chemically amplified crosslinked resists. Data supporting an electron transfer mechanism of sensitization from the excited state of the sensitizer to the acid generator are provided. Initial lithographic screening demonstrates the potential for both high sensitivity and submicron resolution in these systems.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Amanda K. Berry, Wayne E. Feely, Stephen D. Thompson, Gary S. Calabrese, Roger F. Sinta, Angelo A. Lamola, James W. Thackeray, and George W. Orsula "Chemically amplified resists for I-line and G-line applications", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); https://doi.org/10.1117/12.20113
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Cited by 4 scholarly publications.
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KEYWORDS
Silver

Near ultraviolet

Lithography

Luminescence

Phosphorescence

Absorption

Absorbance

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