Reduction of lateral swelling and incoporation of DESIRE in MOS processing

Anne-Marie Goethals; David N. Nichols; Maaike Op de Beeck; P. De Geyter; Ki-Ho Baik; Luc Van den Hove; Bruno Roland; Ria Lombaerts

doi:10.1117/12.20116

1 June 1990 Reduction of lateral swelling and incoporation of DESIRE in MOS processing

Anne-Marie Goethals, David N. Nichols, Maaike Op de Beeck, P. De Geyter, Ki-Ho Baik, Luc Van den Hove, Bruno Roland, Ria Lombaerts

Author Affiliations +

Proceedings Volume 1262, Advances in Resist Technology and Processing VII; (1990) https://doi.org/10.1117/12.20116
Event: Microlithography '90, 1990, San Jose, CA, United States

Abstract

The DESIRE1,2 process is based on selective silylation and subsequent dry development. A problem with silylation of resists is the volume expansion3 of the resist image, which results in pattern deformation and displacement of small features near large structures, also referred to as proximity effect. This lateral swel1ing45 should be reduced before implementation of DESIRE in ULSI processes. The effect of processing conditions, exposure wavelength, polymer composition and type of silylating agent on this swelling phenomenon have been studied and several solutions for reducing the swelling are proposed. Both thermal and UV induced crosslinking have been found to be a major contributor for elimination of the swelling. During silylation the silylating agent diffuses into the resist and reacts with the hydroxyl groups of the polymer. Swelling was reduced by lowering the concentration of these hydroxyl groups and by making use of different silylating agents with a smaller ballast group on the Si. The DESIRE process was implemented in a 0.5 xm gatelength NMOS process, in order to examine its compatibility with MOS processing, especially dry etch characteristics. 0.5 jim transistors have been succesfully made.

Citation Download Citation

Anne-Marie Goethals, David N. Nichols, Maaike Op de Beeck, P. De Geyter, Ki-Ho Baik, Luc Van den Hove, Bruno Roland, and Ria Lombaerts "Reduction of lateral swelling and incoporation of DESIRE in MOS processing", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); https://doi.org/10.1117/12.20116

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available