Paper
1 June 1990 New indexes of the 0.5-μm resolution resist for optical lithography
Aritoshi Sugimoto, Tetsuo Ito, Sadao Okano, Masahiro Nozaki, Takeshi Kato, Kazuyuki Suko, Masayasu Tsunematsu, Kazuya Kadota
Author Affiliations +
Abstract
New indexes to evaluate and simulate the resolution power of the UV resists based on the dissolution rate curve as it relates to local inhibitor concentration are proposed. Optical parameters and the dissolution rate curve of commercially available resists were measured and studied to show their effect on the resolution power. The optical parameters A B and C had very little effect on the resolution power while the dissolution rate curve greatly effected the resolution power. Two indexes are extracted from the dissolution rate curve. One is the contrast of the dissolution rate and the other is the range of the dissolution rate. By using these indexes the resolution power can be easily described. The indexes of an imaginary resist required for a 0. 5. tm process is shown. 1 .
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Aritoshi Sugimoto, Tetsuo Ito, Sadao Okano, Masahiro Nozaki, Takeshi Kato, Kazuyuki Suko, Masayasu Tsunematsu, and Kazuya Kadota "New indexes of the 0.5-μm resolution resist for optical lithography", Proc. SPIE 1264, Optical/Laser Microlithography III, (1 June 1990); https://doi.org/10.1117/12.20218
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KEYWORDS
Photoresist materials

Optical lithography

Cadmium

Chlorine

Photoresist developing

Photoresist processing

Optical resolution

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