Efficient mask characterization through automated contour and corner rounding extraction

Rainer Zimmermann; Joost Bekaert; Mariya Braylovska; Balakumar Baskaran; Vicky Philipsen; Martin Bohn; Michael Bachmann; Ulrich Klostermann; Eric Hendrickx; Wolfgang Demmerle

doi:10.1117/12.2675486

5 October 2023 Efficient mask characterization through automated contour and corner rounding extraction

Rainer Zimmermann, Joost Bekaert, Mariya Braylovska, Balakumar Baskaran, Vicky Philipsen, Martin Bohn, Michael Bachmann, Ulrich Klostermann, Eric Hendrickx, Wolfgang Demmerle

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Proceedings Volume 12802, 38th European Mask and Lithography Conference (EMLC 2023); 128020J (2023) https://doi.org/10.1117/12.2675486
Event: 38th European Mask and Lithography Conference, 2023, Dresden, Germany

Abstract

Wafer CD Uniformity (CDU) and pattern fidelity are useful properties to monitor when considering yield improvement and scaling to smaller dimensions. Besides control of process fluctuations (e.g., focus, dose), wafer stack film thickness uniformity, and image quality (e.g., contrast), quality of mask manufacturing and OPC models are essential to optimize these properties. Therefore, a proper characterization of the written mask dimensions is becoming more and more important, especially as the mask pattern complexity increases through Inverse Lithography Technology (ILT) as well as the need for curvilinear or all-angle designs. Applying contour-based mask quality assessment instead of traditional gauge-based characterization of mask dimensions allows to intrinsically capture mask imperfections like corner rounding (CR) of the absorber for complex shapes which would be hard to measure and categorize by using only a few gauges. Thus, in our study, we examine ways to use contour-based mask characterization methods, including CD and area uniformity, linearity, and CR determination to evaluate mask quality. We present a method and flow to automatically extract contours and determine values for mask CR from top-down mask SEM images. Contour-based metrology and data evaluation is then used to quantitatively address the above-mentioned mask properties of interest. Finally, as an initial approach to investigate impact of mask quality on wafer printing, we apply a generic EUV model to ideal and imperfect masks and compare the simulated contour results. Using realistic mask patterns for lithography modeling and simulation is considered essential to achieve the required accuracy for advanced nodes and technologies.

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Rainer Zimmermann, Joost Bekaert, Mariya Braylovska, Balakumar Baskaran, Vicky Philipsen, Martin Bohn, Michael Bachmann, Ulrich Klostermann, Eric Hendrickx, and Wolfgang Demmerle "Efficient mask characterization through automated contour and corner rounding extraction", Proc. SPIE 12802, 38th European Mask and Lithography Conference (EMLC 2023), 128020J (5 October 2023); https://doi.org/10.1117/12.2675486

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KEYWORDS

Scanning electron microscopy

Contour extraction

Lithography

Critical dimension metrology

Semiconducting wafers

Calibration

Image quality

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