Spectral ellipsometry of semiconductors and semiconductor structures

Luis Vina; Miquel Garriga; Manuel Cardona

doi:10.1117/12.20842

1 August 1990 Spectral ellipsometry of semiconductors and semiconductor structures

Luis Vina, Miquel Garriga, Manuel Cardona

Proceedings Volume 1286, Modulation Spectroscopy; (1990) https://doi.org/10.1117/12.20842
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

Spectral ellipsornetry has been proven to be a very powerful tool to study the band structure and electronic properties of semiconductors. Line-shape analysis of the derivative spectra of the pseudo-dielectric function allows a precise determination of critical point parameters, such as amplitudes, energies, broadening and excitonic phase angles. Here we will review the application of the technique, showing examples of the effects of temperature, alloy and doping in the band structure of semiconductors and the effects of a new periodicity along the growth direction in semiconductor structures.

Citation Download Citation

Luis Vina, Miquel Garriga, and Manuel Cardona "Spectral ellipsometry of semiconductors and semiconductor structures", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); https://doi.org/10.1117/12.20842

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