Presentation + Paper
11 March 2024 cw-THz receivers based on rhodium-doped InGaAs with 125 dB peak dynamic range
Milan Deumer, Steffen Breuer, Shahram Keyvaninia, Alexander Dohms, Simon Nellen, Chris Nguyen, Lars Liebermeister, Martin Schell, Robert B. Kohlhaas
Author Affiliations +
Abstract
We report on novel continuous wave (cw) photoconductive terahertz (THz) receivers based on rhodium (Rh) doped indium gallium arsenide grown by molecular beam epitaxy. The Rh-doped material exhibits outstanding charge carrier mobility up to 1800 cm2/Vs while maintaining ultrashort carrier lifetimes between 0.26 and 1.5 ps. The photoconductive antennas (PCAs) made from this material exhibit a THz responsivity significantly improved by a factor of 20 to 100, which overcompensates their slightly higher noise levels. In a homodyne coherent THz spectroscopy setup, these novel receivers enable us to measure THz spectra with a record peak dynamic range up to 125 dB and a spectral bandwidth of 4.5 THz. This is an improvement of 13 dB over the previous record with InGaAs:Fe-based PCAs and leads to improved accuracy and measurement speed in cw-THz spectroscopy.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Milan Deumer, Steffen Breuer, Shahram Keyvaninia, Alexander Dohms, Simon Nellen, Chris Nguyen, Lars Liebermeister, Martin Schell, and Robert B. Kohlhaas "cw-THz receivers based on rhodium-doped InGaAs with 125 dB peak dynamic range", Proc. SPIE 12885, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XVII, 1288505 (11 March 2024); https://doi.org/10.1117/12.3003109
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KEYWORDS
Terahertz radiation

Receivers

Indium gallium arsenide

Epitaxy

Rhodium

Continuous wave operation

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