Kinetic inductance effects in high Tc microstrip circuits at microwave frequencies

Douglas P. Byrne; Richard Y. Kwor; Thottam S. Kalkur

doi:10.1117/12.21046

1 October 1990 Kinetic inductance effects in high Tc microstrip circuits at microwave frequencies

Douglas P. Byrne, Richard Y. Kwor, Thottam S. Kalkur

Proceedings Volume 1292, Superconductivity Applications for Infrared and Microwave Devices; (1990) https://doi.org/10.1117/12.21046
Event: 1990 Technical Symposium on Optics, Electro-Optics, and Sensors, 1990, Orlando, FL, United States

Abstract

The phenomenon of kinetic inductance, exhibited by superconducting transmission lines in which the conductor separation and thickness are on the order of a magnetic field penetration depth , can be exploited both for device applications and for the measurement of fundamental superconductor properties. Penetration depths in the high-Ta materials (thousands of angstroms) are typically an order of magnitude or more larger than the penetration depths of the low temperature superconductors (hundreds of angstroms). With regard to geometric tolerances, fabrication restrictions for high-Ta micmelectronic devices utilizing kinetic inductance are therefore much less severe than for their low-Ta counterparts. Microwave S-parameter measurements on microstrip resonators made from very thin conductors, separated by a thin, lowloss dielectric, can be used to determine the absolute value of the penetration depth, th applicability of kinetic inductance effects in the superconductors, and the surfa,e resistivities of the superconductors. This paper describes the fabricatioti of high-Ta superconducting thin films of BiCaSrCuO, and the patterning of these films into integrated microstrip transmission line resonators designed to exhibit the effects of kinetic inductance. Of particular interest are techniques we have developed to fabricate very thin, low-loss dielectric layers on BiCaSrCuO. We report on microwave S-parameter measurements on these resonators, and on the functional dependence of transmission line phase velocity and characteristic impedance with temperature and microwave power density, especially at temperatures just below T. These results are then used to infer high frequency penetration depths and surface resistivities in BiCaSiCuO. Applications are also suggested.

Citation Download Citation

Douglas P. Byrne, Richard Y. Kwor, and Thottam S. Kalkur "Kinetic inductance effects in high Tc microstrip circuits at microwave frequencies", Proc. SPIE 1292, Superconductivity Applications for Infrared and Microwave Devices, (1 October 1990); https://doi.org/10.1117/12.21046

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