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10 April 2024 Organic dry development rinse (O-DDR) process for MOR patterning toward high-NA EUV
Satoshi Takeda, Wataru Shibayama, Rikimaru Sakamoto, Syuhei Shigaki, Yuki Furukawa, Taiki Saijo, Kodai Kato, Seonggil Heo, Hyo Seon Suh
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Proceedings Volume 12957, Advances in Patterning Materials and Processes XLI; 1295702 (2024) https://doi.org/10.1117/12.3010078
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States
Abstract
Metal Oxide Resist (MOR) is one of the promising resists for High-NA EUV lithography. However since the pattern pitch is getting smaller, pattern collapse issue has been getting sever problem. We developed Organic Dry Development Rinse (O-DDR) process as extension for wet development to prevent the pattern collapse issue without using any special equipment. O-DDR process has been demonstrated the capability to prevent MOR pattern collapse and expand process window with pitch 32nm pillar and pitch 28nm line and space in EUV lithography . In this paper, we introduce O-DDR process concept and performance for MOR patterning.
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Satoshi Takeda, Wataru Shibayama, Rikimaru Sakamoto, Syuhei Shigaki, Yuki Furukawa, Taiki Saijo, Kodai Kato, Seonggil Heo, and Hyo Seon Suh "Organic dry development rinse (O-DDR) process for MOR patterning toward high-NA EUV", Proc. SPIE 12957, Advances in Patterning Materials and Processes XLI, 1295702 (10 April 2024); https://doi.org/10.1117/12.3010078
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KEYWORDS
Optical lithography
Extreme ultraviolet
Capillaries
Extreme ultraviolet lithography
Dry etching
Liquids
Materials processing
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