Etching approaches for next generation EUV photomask materials

Jeff Chen; Rebecca D. Stern; Rao Yalamanchili; Yohei Ikebe; Takahiro Onoue; Bryan Kasprowicz

doi:10.1117/12.3035201

12 November 2024 Etching approaches for next generation EUV photomask materials

Jeff Chen, Rebecca D. Stern, Rao Yalamanchili, Yohei Ikebe, Takahiro Onoue, Bryan Kasprowicz

Author Affiliations +

Proceedings Volume 13216, Photomask Technology 2024; 1321607 (2024) https://doi.org/10.1117/12.3035201
Event: SPIE Photomask Technology + EUV Lithography, 2024, Monterey, California, United States

Abstract

The next generation high NA EUV lithography technology requires using new absorber materials with ideal optical properties (low-n/high-k) to mitigate the mask 3D effects. This new class of absorber materials is typically found from a metal alloy containing noble metal elements such as Pt, Ir, Ni, etc. based on the published studies. Etching becomes significantly challenging due to the very low chemical reactivity of such films and the reaction products from such materials are typically non-volatile and difficult to remove from the etching chamber. This paper presents a new etching approach with applying thermodynamic analysis to identify etching gas chemistries, followed by selective removal of the reaction products. By balancing the formation of desired chemical surface reaction and the removal of a reaction product, a new plasma etching process is developed and demonstrated for a low n / high k EUV absorber film etching application.

Conference Presentation

Citation Download Citation

Jeff Chen, Rebecca D. Stern, Rao Yalamanchili, Yohei Ikebe, Takahiro Onoue, and Bryan Kasprowicz "Etching approaches for next generation EUV photomask materials", Proc. SPIE 13216, Photomask Technology 2024, 1321607 (12 November 2024); https://doi.org/10.1117/12.3035201

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