Current trends and issues for low-damage dry etching of optoelectronic devices

Evelyn L. Hu

doi:10.1117/12.24377

1 March 1991 Current trends and issues for low-damage dry etching of optoelectronic devices

Evelyn L. Hu

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24377
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

STRACT Dry etching techniques such as reactive ion etching (RIE) have found wide applicability in the fabrication of optoelectronic devices. However as requirements on device performance become more stringent and as devices incorporate the low dimensional quantum wires or dots issues such as materials selectivity controlled etching through thin layers fidelity of pauern transfer and etch-induced damage assume greater importance. This paper reviews recent work on the assessment of etch-induced damage including cathodoluminescence of multiple quantum wells and Raman spectroscopy. In addition to ion beam-induced damage created in the substrate chemical modification of the etched surfaces may compromise optoelectronic device performance. Some low-damage dry etching alternatives to RIE are discussed such as radical beam/ion beam etching (RBIBE) and thermally enhanced etching.

Citation Download Citation

Evelyn L. Hu "Current trends and issues for low-damage dry etching of optoelectronic devices", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24377

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