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1 March 1991 Deep levels in III-V compounds, heterostructures, and superlattices
Jacques C. Bourgoin, S. L. Feng, H. J. von Bardeleben
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Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24309
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
We first show how the characteristical properties of defects (energy level capture cross-sections) in systems such as single heterostructures and superlattices can be deduced from the corresponding properties in a bulk material. Concluding that these characteristics can be obtained once the band structure of the system is known we discuss as illustration the problems encountered with the two principal defects present in GaAs and related alloys namely the EL2 defect and the DX center.
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Jacques C. Bourgoin, S. L. Feng, and H. J. von Bardeleben "Deep levels in III-V compounds, heterostructures, and superlattices", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24309
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KEYWORDS
Heterojunctions
Superlattices
Gallium arsenide
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