Paper
30 June 1994 Real-space transfer of photoexcited electrons in type-II superlattices via optical-phonon emission
M. U. Erdogan, V. Sankaran, Ki Wook Kim, Michael A. Stroscio, Gerald J. Iafrate
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Abstract
The (Gamma) -X scattering rate of electrons in type-II superlattices by optical-phonon emission is calculated. The tight binding method for electronic band structure and the dielectric continuum model for phonons are used. The relative strength of scattering due to different phonon modes is examined for varying superlattice dimensions. The scattering rate is highest when the energy separation between the (Gamma) and X levels is smallest, and decreases quickly as the separation increases. It is found that the strongest scattering rate is due to the emission of AlAs confined modes. Changing of parity with layer thickness and its effect on scattering are discussed.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. U. Erdogan, V. Sankaran, Ki Wook Kim, Michael A. Stroscio, and Gerald J. Iafrate "Real-space transfer of photoexcited electrons in type-II superlattices via optical-phonon emission", Proc. SPIE 2146, Physics and Simulation of Optoelectronic Devices II, (30 June 1994); https://doi.org/10.1117/12.178540
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Cited by 2 scholarly publications.
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KEYWORDS
Phonons

Scattering

Superlattices

Electrons

Gallium arsenide

Interfaces

Neodymium

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