Paper
1 March 1991 Growth and properties of GaxIn1-xAs (x
MingZe Du, Jinshan Yuan, Yixin Jin, Tianming Zhou, Jiang Hong, ChunRong Hong, BaoLin Zhang
Author Affiliations +
Abstract
Ga As (x 47) epitayers tatticemismatched to laP and steptike composition tayers of InAs (O 61) were prepared by atmospheric pressure metatorganic chemical vapor deposition (MOCVD) with a horizontal reactor using trimethytindiu. m (TMIn) trimethylgalliu. m ( TMGa) arsine (AsH and phosphine (PH as the source materials. The alloy compositions were measured by the Electronic Probe (EP) and the XRay Diffraction (XRD) . The crystalline quality of the epilayer was detected by the Xray double diffraction and the composition depth profile of Ga. InAs/InAsP1 InP was measured by secondary ion mass spectrometry (SIMS)respectively. It indicated that the introduction of steplike composition layers was an effective method for decreasing the latticemismatch between layers and improving the crystalline quality.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
MingZe Du, Jinshan Yuan, Yixin Jin, Tianming Zhou, Jiang Hong, ChunRong Hong, and BaoLin Zhang "Growth and properties of GaxIn1-xAs (xhttps://doi.org/10.1117/12.24432
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KEYWORDS
Diffraction

Crystals

Metalorganic chemical vapor deposition

Optoelectronic devices

Gallium

Heterojunctions

Atmospheric physics

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