Paper
1 March 1991 Measurements of the InxGa1-xAs/GaAs critical layer thickness
Thorvald G. Andersson, M. J. Ekenstedt, Vladimir D. Kulakovskii, S. M. Wang, J. Y. Yao
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Abstract
The critical layer thickness (CLT) for InxGaixAs/GaAs has been studied by photoluminescence transmission electron microscopy and reflection high energy electron diffraction with the composition x and growth temperatures as parameters. The obtained values of CLT have been compared with theoretical models. None of them coincide with the experimental results. For x 0. 3 the CLT varies rapidly with x while the dependence is slow for x 3. Here the CLT is small typically a few monolayers. The CLT is governed by dislocation generation for x 0. 3 and by the onset of three dimensional growth for x 3.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thorvald G. Andersson, M. J. Ekenstedt, Vladimir D. Kulakovskii, S. M. Wang, and J. Y. Yao "Measurements of the InxGa1-xAs/GaAs critical layer thickness", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24412
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KEYWORDS
Quantum wells

3D modeling

Diffraction

Optoelectronic devices

Chemical species

Luminescence

Gallium arsenide

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