Photoconductivity decay method for determining minority carrier lifetime of p-type HgCdTe

Joseph Reichman

doi:10.1117/12.46504

1 August 1991 Photoconductivity decay method for determining minority carrier lifetime of p-type HgCdTe

Joseph Reichman

Proceedings Volume 1484, Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches; (1991) https://doi.org/10.1117/12.46504
Event: Orlando '91, 1991, Orlando, FL, United States

Abstract

A theoretical study of the photoconductivity decay method is presented for determining excess carrier lifetime of p-type HgCdTe when recombinations are due to trapping centers. The solutions to the equations describing the transient decay are numerically evaluated and compared with steady-state lifetimes determined using the Shockley-Read equations. It is found for p-type HgCdTe that for short pulse width photoexcitation, the minority carrier lifetime can be obtained from photoconductivity decay measurements.

Citation Download Citation

Joseph Reichman "Photoconductivity decay method for determining minority carrier lifetime of p-type HgCdTe", Proc. SPIE 1484, Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches, (1 August 1991); https://doi.org/10.1117/12.46504

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