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Thin films of pure and silver doped zinc telluride were deposited on well-cleaned Corning glass substrates maintained at temperatures in the range 303 - 598 K by the vacuum evaporation method. The electrical conductivity of the pure films decreased from 1.1 X 10-5 to 4.4 X 10-6 ohm-1 cm-1 with the deposition temperature. The activation energy in the high temperature region was 0.33 eV, while at low temperatures it was 0.06 eV above the valence band. In the Ag doped films, the conductivity increased one order of magnitude. The optical band gap reduced from 2.23 eV to 2.18 eV with the Ag doping content.
N. Umamaheswa Reddy,S. Uthanna, andP. Jayarama Reddy
"Electrical and optical properties of pure and silver-doped zinc telluride films", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.57033
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N. Umamaheswa Reddy, S. Uthanna, P. Jayarama Reddy, "Electrical and optical properties of pure and silver-doped zinc telluride films," Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.57033