Electrical properties of Cd0.3Ni0.7+xMnxFe2O4 ferrites

M. G. Patil; V. C. Mahajan; B. V. Bhise; S. M. Chandake; B. L. Patil; A. B. Patil; S. R. Sawant; S. A. Patil

doi:10.1117/12.57040

1 February 1992 Electrical properties of Cd_0.3Ni_0.7+xMn_xFe₂O₄ ferrites

M. G. Patil, V. C. Mahajan, B. V. Bhise, S. M. Chandake, B. L. Patil, A. B. Patil, S. R. Sawant, S. A. Patil

Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57040
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India

Abstract

Electrical resistivity of Cd_0.3Ni_{0.7 + x}Mn_xFe_{2 - 2x}O₄ ferrites has been measured in the temperature range from 300 K to 1000 K. Three distinct regions have been observed in log (rho) Vs 10³/T curves for all the samples. This is explained on the basis of the hopping mechanism. The conduction in the first region is due to impurity charge carriers. In the second and third regions it is influenced by the order-disorder hopping mechanism. The variation of resistivity with Mn concentration shows an increase in resistivity up to x equals 0.10 and decreases with further increase of x. The increase in resistivity is due to stable bond formation of Fe² + Mn⁺³ at B site which hinders the Verway mechanism. The decrease in resistivity is attributed to the formation of Ni³⁺, Mn³⁺ clusters and Mn₃O₄ + Mn₂O₃ impurity phases. Additional trapping due to local Jahn-Teller distortion around Mn³ and Mn⁴ also plays an important role in these materials.

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M. G. Patil, V. C. Mahajan, B. V. Bhise, S. M. Chandake, B. L. Patil, A. B. Patil, S. R. Sawant, and S. A. Patil "Electrical properties of Cd_0.3Ni_0.7+xMn_xFe₂O₄ ferrites", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.57040

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