Optical and Electrical Properties of II-VI Wide Gap Semiconducting Barium Suiphide

D. R. Vij; Nahar Singh

doi:10.1117/12.634082

1 February 1992 Optical and Electrical Properties of II-VI Wide Gap Semiconducting Barium Suiphide

D. R. Vij, Nahar Singh

Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.634082
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India

Abstract

Among wide gap semiconducting compounds the alkaline earth suiphides are being exploited for device applications such as multi.- color thin-film electro.-luminescent, maieto.-optical and IR devices; dosimetry and high resolution imaging. Barium Sulphide (BaS), being one of the compounds of this class of semiconductors, has also been studied by various workers in view of its expected useful applications. The authors have been able to review the optical, electrical and defect structure properties of BaS. Activators and co-activators have been found to form luminescent centres in this material. Schottky disorder and vacancy migration has been observed to dominate in these crystals0 However, there remains a controversy with regard to the band structure o the material.

Citation Download Citation

D. R. Vij and Nahar Singh "Optical and Electrical Properties of II-VI Wide Gap Semiconducting Barium Suiphide", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.634082

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