Paper
1 February 1992 Photovoltaic properties of ZnxCd1-xS/CuGaSe2 thin film solar cells
K. T. Ramakri Reddy, P. Jayarama Reddy
Author Affiliations +
Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57019
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
Polycrystalline ZnxCd1-xS/CuGaSe2 thin film heterojunction solar cells were prepared by laser evaporating CuGaSe2 onto sprayed ZnxCd1-xS films. The reasons for the low efficiency of the cells were discussed in view of the poor performance of the device for x > 0.6. The photovoltaic properties of the cells were studies using illuminated I - V characteristics. A maximum efficiency of 4.9% was obtained on the cells.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. T. Ramakri Reddy and P. Jayarama Reddy "Photovoltaic properties of ZnxCd1-xS/CuGaSe2 thin film solar cells", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.57019
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Zinc

Solar cells

Photovoltaics

Thin film solar cells

Thin films

Heterojunctions

Cadmium

RELATED CONTENT


Back to Top