Photovoltaic effect in thin film CdS-CdTe heterojunctions treated on CdCl2

Petru A. Gashin; Tamara Potlog; Oleg Shapoval; Lidia Ghimpu; Vladimir Fedorov; Petru I. Ketrush

doi:10.1117/12.203606

8 March 1995 Photovoltaic effect in thin film CdS-CdTe heterojunctions treated on CdCl₂

Petru A. Gashin, Tamara Potlog, Oleg Shapoval, Lidia Ghimpu, Vladimir Fedorov, Petru I. Ketrush

Proceedings Volume 2461, ROMOPTO '94: Fourth Conference in Optics; (1995) https://doi.org/10.1117/12.203606
Event: ROMOPTO '94: 4th Conference on Optics, 1994, Bucharest, Romania

Abstract

Solar cells (SC) CdS-CdTe were fabricated by successive deposition of CdS and CdTe layers onto a glass substrate with the area 4 cm² covered by ITO layer using hot wall transport. CdS layers had the thickness 0.8 - 2.0 micrometers , the resistivity (2.0 - 2.8)*10⁴(Omega) *cm and transparency of 65 - 70%. CdTe layers were As doped during growth process and had the resistivity (3 - 7)*10⁵(Omega) *cm. At the illumination of CdS-CdTe heterojunctions with an integral light with the intensity of 80 mW/cm² (AM1.5) the short circuit current is I_SC equals 0.4 - 0.6 mA/cm² and open circuit voltage is U_OC equals 0.4 V. For to enhance photoelectrical parameters the heterostructures were immersed in CdCl₂:CH₃OH, and then were heat treated in the air. The examination of treatment time and temperature had shown that the optimum temperature is 400 degree(s)C and time interval 40 - 45 min. The illumination of treated structures in the same conditions as non treated had shown that short circuit current reaches I_SC equals 16.8 mA/cm² and open circuit voltage U_OC equals 0.54 V. The photosensitivity region is also broadening. Homogeneous photosensitivity in the region from 0.5 micrometers to 0.9 micrometers is observed.

Citation Download Citation

Petru A. Gashin, Tamara Potlog, Oleg Shapoval, Lidia Ghimpu, Vladimir Fedorov, and Petru I. Ketrush "Photovoltaic effect in thin film CdS-CdTe heterojunctions treated on CdCl₂", Proc. SPIE 2461, ROMOPTO '94: Fourth Conference in Optics, (8 March 1995); https://doi.org/10.1117/12.203606

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