Advanced Si IR detectors using molecular beam epitaxy

True Lon Lin; Eric W. Jones; Thomas George; Alexander Ksendzov; M. L. Huberman

doi:10.1117/12.48722

1 December 1991 Advanced Si IR detectors using molecular beam epitaxy

True Lon Lin, Eric W. Jones, Thomas George, Alexander Ksendzov, M. L. Huberman

Proceedings Volume 1540, Infrared Technology XVII; (1991) https://doi.org/10.1117/12.48722
Event: San Diego, '91, 1991, San Diego, CA, United States

Abstract

SiGe/Si heterojunction internal photoemission (HIP) long wavelength infrared (LWIR) detectors have been fabricated by MBE. The SiGe/Si HIP detector offers a tailorable spectral response in the long wavelength infrared regime by varying the SiGe/Si heterojunction barrier. Degenerately doped p(+) SiGe layers were grown using elemental boron, as the dopant source allows a low growth temperature. Good crystalline quality was achieved for boron-doped SiGe due to the reduced growth temperature. The dark current density of the boron-doped HIP detectors was found to be thermionic emission limited. HIP detectors with a 0.066 eV were fabricated and characterized using activation energy analysis, corresponding to a 18 micron cutoff wavelength. Photoresponse of the detectors at wavelengths ranging from 2 to 12 microns has been characterized with corresponding quantum efficiencies of 5 - 0.1 percent.

Citation Download Citation

True Lon Lin, Eric W. Jones, Thomas George, Alexander Ksendzov, and M. L. Huberman "Advanced Si IR detectors using molecular beam epitaxy", Proc. SPIE 1540, Infrared Technology XVII, (1 December 1991); https://doi.org/10.1117/12.48722

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