Light scattering methods for semiconductor process monitoring and control

Richard A. Gottscho; Matthew Vernon; Jeffrey A. Gregus; E. Yoon; K. P. Giapis; Todd R. Hayes; William S. Hobson; Lee M. Clark; J. Kruskal; Diane Lambert; Avi Kornblit; D. Sinatore

doi:10.1117/12.56644

1 January 1992 Light scattering methods for semiconductor process monitoring and control

Richard A. Gottscho, Matthew Vernon, Jeffrey A. Gregus, E. Yoon, K. P. Giapis, Todd R. Hayes, William S. Hobson, Lee M. Clark, J. Kruskal, Diane Lambert, Avi Kornblit, D. Sinatore

Author Affiliations +

Proceedings Volume 1594, Process Module Metrology, Control and Clustering; (1992) https://doi.org/10.1117/12.56644
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

Light scattering methods are being used in semiconductor device fabrication for such diverse purposes as particulate monitoring and linewidth control. In this overview, we focus on applications of light scattering for monitoring reactively ion etched trench profiles and plasma passivation of III-V materials.

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Richard A. Gottscho, Matthew Vernon, Jeffrey A. Gregus, E. Yoon, K. P. Giapis, Todd R. Hayes, William S. Hobson, Lee M. Clark, J. Kruskal, Diane Lambert, Avi Kornblit, and D. Sinatore "Light scattering methods for semiconductor process monitoring and control", Proc. SPIE 1594, Process Module Metrology, Control and Clustering, (1 January 1992); https://doi.org/10.1117/12.56644

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