Polarization studies with broadband deep-UV lithography

Birol Kuyel; Eytan Barouch; Uwe Hollerbach; Steven A. Orszag

doi:10.1117/12.130336

1 June 1992 Polarization studies with broadband deep-UV lithography

Birol Kuyel, Eytan Barouch, Uwe Hollerbach, Steven A. Orszag

Proceedings Volume 1674, Optical/Laser Microlithography V; (1992) https://doi.org/10.1117/12.130336
Event: Microlithography '92, 1992, San Jose, CA, United States

Abstract

We have performed a study of TM and TE polarization with a single wavelength and a broadband spectrum (14 nm in width) exposure. We also examined effects of using scalar and vector aerial images, as well as process latitude of the post-exposure baking. We used SNR-248 negative deep-UV resist with an exposure energy of 24 mJ/cm2. The resist thickness employed was 1? over 0.28? silicon oxide over a silicon substrate. A typical line width and space studied ranged from 0.35? to 0.5?.

Citation Download Citation

Birol Kuyel, Eytan Barouch, Uwe Hollerbach, and Steven A. Orszag "Polarization studies with broadband deep-UV lithography", Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); https://doi.org/10.1117/12.130336

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