Advanced-power and low-noise HEMT devices and MMICs

P. C. Chao; P. M. Smith; J. M. Ballingall

doi:10.1117/12.137717

3 September 1992 Advanced-power and low-noise HEMT devices and MMICs

P. C. Chao, P. M. Smith, J. M. Ballingall

Proceedings Volume 1680, High-Speed Electronics and Optoelectronics; (1992) https://doi.org/10.1117/12.137717
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

Advanced high electron mobility transistors (HEMTs) and MMICs, currently under development at GE for a variety of power and low noise applications at frequencies ranging from 1 to 100 GHz, is reviewed, and future trends are projected.

Citation Download Citation

P. C. Chao, P. M. Smith, and J. M. Ballingall "Advanced-power and low-noise HEMT devices and MMICs", Proc. SPIE 1680, High-Speed Electronics and Optoelectronics, (3 September 1992); https://doi.org/10.1117/12.137717

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