Temperature dependence of hot-carrier lifetime due to trapped charge and interface state generation

Miryeong Song; Kenneth P. MacWilliams; Jason C.S. Woo

doi:10.1117/12.139355

14 January 1993 Temperature dependence of hot-carrier lifetime due to trapped charge and interface state generation

Miryeong Song, Kenneth P. MacWilliams, Jason C.S. Woo

Proceedings Volume 1802, Microelectronics Manufacturing and Reliability; (1993) https://doi.org/10.1117/12.139355
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

Hot carrier device lifetime diminishes dramatically as operating temperature decreases. The hot carrier lifetime at liquid nitrogen temperature is usually several orders of magnitude lower than at room temperature. In this work, we show the dependence of hot carrier device lifetime of LDD nMOSFETs on temperature and stress condition in the temperature range from 78 K to room temperature. There is a cross-over point at which the worst-case hot carrier stress condition switches from V_g approximately equals 1/2 V_d (V_g I_bmax) to V_g equals V_d with decreasing temperature. Consequently, the dominant damage mechanism switches from interface state generation to trapped charge generation.

Citation Download Citation

Miryeong Song, Kenneth P. MacWilliams, and Jason C.S. Woo "Temperature dependence of hot-carrier lifetime due to trapped charge and interface state generation", Proc. SPIE 1802, Microelectronics Manufacturing and Reliability, (14 January 1993); https://doi.org/10.1117/12.139355

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