Arsenic diffused p+-n HgCdTe photodiodes

Jolanta Rutkowska; Antoni Rogalski; Jozef Piotrowski; Jaroslaw Pawluczyk

doi:10.1117/12.156918

15 October 1993 Arsenic diffused p⁺-n HgCdTe photodiodes

Jolanta Rutkowska, Antoni Rogalski, Jozef Piotrowski, Jaroslaw Pawluczyk

Proceedings Volume 1845, Liquid and Solid State Crystals: Physics, Technology and Applications; (1993) https://doi.org/10.1117/12.156918
Event: Liquid and Solid State Crystals: Physics, Technology, and Applications, 1992, Zakopane, Poland

Abstract

The p⁺-n homojunctions were formed by arsenic diffusion in the HgCdTe monocrystals and epilayers. Photodiode performance was established by measuring the current-voltage and spectral response characteristics. LWIR photodiodes are background limited at 77 K. MWIR photodiodes effectively operate at elevated temperature around 200 K and exhibit near BLIP performance when optical immersion is used.

Citation Download Citation

Jolanta Rutkowska, Antoni Rogalski, Jozef Piotrowski, and Jaroslaw Pawluczyk "Arsenic diffused p⁺-n HgCdTe photodiodes", Proc. SPIE 1845, Liquid and Solid State Crystals: Physics, Technology and Applications, (15 October 1993); https://doi.org/10.1117/12.156918

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