Strained quaternary InAlGaAs 810-nm lasers

John A. Baumann; Steven L. Yellen; Roland E. Juhala; Allan H. Shepard; Charlton M. Harding; Richard J. Dalby; Robert G. Waters

doi:10.1117/12.146907

16 June 1993 Strained quaternary InAlGaAs 810-nm lasers

John A. Baumann, Steven L. Yellen, Roland E. Juhala, Allan H. Shepard, Charlton M. Harding, Richard J. Dalby, Robert G. Waters

Author Affiliations +

Proceedings Volume 1850, Laser Diode Technology and Applications V; (1993) https://doi.org/10.1117/12.146907
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

In 1991, strained InAlGaAs quantum well lasers were first proposed as alternatives to AlGaAs lasers for various applications, including solid-state pumping. Enhanced reliability was the rationale for their development, having been inspired by earlier observations of lattice hardening in strained InGaAs lasers. The hoped-for dark-line defect (DLD) suppression as well as a threshold current advantage for this system have already been documented. In this update, we will present further aspects of this work, including long-term reliability, maximum (catastrophic) power limits, epitaxial structure design bounds and parametric crystal growth investigations. Our work has enabled the demonstration of 15 W cw linear arrays and pulsed V-Groove Phased Arrays. Their performance and potential applications will also be discussed.

Citation Download Citation

John A. Baumann, Steven L. Yellen, Roland E. Juhala, Allan H. Shepard, Charlton M. Harding, Richard J. Dalby, and Robert G. Waters "Strained quaternary InAlGaAs 810-nm lasers", Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); https://doi.org/10.1117/12.146907

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